Iarratas Quote
paramters Táirge
- VGS (ú) (Max) @ Id
- 3V @ 1mA
- VGS (Uasmhéid)
- +25V, -10V
- teicneolaíocht
- SiCFET (Silicon Carbide)
- Soláthraí Pacáiste Gléas
- HiP247™
- Sraith
- -
- Rds On (Max) @ Id, VGS
- 69 mOhm @ 40A, 20V
- Power dhiomailt (Max)
- 318W (Tc)
- Pacáistiú
- Tube
- Pacáiste / Cás
- TO-247-3
- Ainmneacha eile
- 497-16598-5
- Teocht Oibriúcháin
- -55°C ~ 200°C (TJ)
- gléasta Cineál
- Through Hole
- Taise Íogaireacht Leibhéal (MSL)
- 1 (Unlimited)
- Stádas Saor in Aisce / Stádas RoHS
- Lead free / RoHS Compliant
- Ionchur toilleas (SFSanna) (Uasmhéid) @ VDS
- 1900pF @ 400V
- Geata Muirear (QG) (Uasmhéid) @ VGS
- 122nC @ 20V
- Cineál FET
- N-Channel
- FET Gné
- -
- Drive Voltage (Max Rds Ar, Min Rds On)
- 20V
- Taosc le Foinse Voltage (RDS)
- 1200V
- Cur síos Mionsonraithe
- N-Channel 1200V 65A (Tc) 318W (Tc) Through Hole HiP247™
- Atá ann faoi láthair - Leanúnach Drain (Id) @ 25 ° C
- 65A (Tc)
Products chineál céanna
- STMicroelectronics SCT50N120
- Bileog sonraí SCT50N120
- Bileog sonraí SCT50N120
- Bileog sonraí SCT50N120 pdf
- Íoslódáil bileog sonraí SCT50N120
- Íomhá SCT50N120
- Cuid SCT50N120
- ST SCT50N120
- STMicroelectronics SCT50N120